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BLF6H10L-160,112

TRANSISTOR RF POWER LDMOST

Product Category: RF FETs
Mfr. Part #
BLF6H10L-160,112
Manufacturer: NXP Semiconductors
Package: SOT467C
Lead Free Status /RoHS Status:
Data Sheet: BLF6H10L-160,112 Datasheet
Inventory: In Stock

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Mfr. Part #: BLF6H10L-160,112

Specifications
Product Details

Specifications

Manufacturer NXP Semiconductors

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer Ampleon USA Inc.

Series -

Packaging Tube

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 952.5MHz ~ 957.5MHz

Gain 20dB

Voltage-Test 50V

Current-Rating -

Noise-Figure -

Current-Test 600mA

Power-Output 38W

Voltage-Rated 104V

Package-Case SOT467C

Supplier-Device-Package SOT467C

Base-Part-Number *

Product Details

General description

A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.

Features and benefits

â— Integrated ESD protection
â— Excellent ruggedness
â— High power gain
â— High efficiency
â— Excellent reliability
â— Easy power control
â— Low Rth providing excellent thermal stability
â— Low output capacitance for wideband performance in Doherty applications
â— Designed for low memory effects providing excellent digital pre-distortion capability
â— No internal matching for broadband applications
â— Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â— RF power applications for GSM, GSM EDGE, W-CDMA, CDMA base stations and
multi carrier applications in the 729 MHz to 960 MHz frequency range

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Mfr. Part #: BLF6H10L-160,112