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BLF881
- Product Category: RF FETs
- Mfr. Part # BLF881
- Package: N/A
- Lead Free Status /RoHS Status:
- Data Sheet: BLF881 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: BLF881
- Product Details
Product Details
General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.Features and benefits
â– 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:â—† Peak envelope power load power = 140 W
â—† Power gain = 21 dB
â—† Drain efficiency = 49 %
◆ Third order intermodulation distortion = −34 dBc
â– DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
â—† Average output power = 33 W
â—† Power gain = 21 dB
â—† Drain efficiency = 34 %
◆ Shoulder distance = −33 dBc (4.3 MHz from center frequency)
â– Integrated ESD protection
â– Excellent ruggedness
â– High power gain
â– High efficiency
â– Excellent reliability
â– Easy power control
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
â– Communication transmitter applications in the UHF bandâ– Industrial applications in the UHF band
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BLF881. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
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Please send inquiry, we will respond immediately.
Mfr. Part #: BLF881
