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BLL6H1214-500,112

TRANS L-BAND RADAR LDMOS SOT539A

Product Category: RF FETs
Mfr. Part #
BLL6H1214-500,112
Manufacturer: NXP Semiconductors
Package: SOT539A
Lead Free Status /RoHS Status:
Data Sheet: BLL6H1214-500,112 Datasheet
Inventory: In Stock

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Mfr. Part #: BLL6H1214-500,112

Specifications
Product Details

Specifications

Manufacturer NXP Semiconductors

Product Category RF FETs

Categories D-Sub Connectors

Manufacturer Amphenol FCI

Series DM HE508

Packaging Tray

Part-Status Active

Connector-Style D-Sub

Connector-Type Receptacle, Female Sockets

Number-of-Positions 9 Positions

Number-of-Rows 2 Rows

Shell-Size-Connector-Layout 1 (DE, E)

Contact-Type Signal

Mounting-Type Free Hanging (In-Line)

Flange-Feature Housing/Shell (Unthreaded)

Termination Solder Cup

Features -

Shell-Material-Finish Steel, Yellow Cadmium Plated

Contact-Finish Gold

Contact-Finish-Thickness -

Ingress-Protection -

Material-Flammability-Rating UL94 V-0

Current-Rating 7.5A

Operating-Temperature -55Â°C ~ 125Â°C

Voltage-Rating 300V

Color -

Contact-Form -

Housing-Material Thermoplastic

Wire-Gauge -

Contact-Material Brass

Backset-Spacing -

Product Details

General description

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Features and benefits

â– Easy power control
â– Integrated ESD protection
â– High flexibility with respect to pulse formats
â– Excellent ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation (1.2 GHz to 1.4 GHz)
â– Internally matched for ease of use
â– Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

Applications

â– L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range

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Mfr. Part #: BLL6H1214-500,112