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BPV11F

Phototransistors T-1.75 900 to 980nm +/-15 deg

Product Category: Phototransistors
Mfr. Part #
BPV11F
Manufacturer: Vishay
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: BPV11F Datasheet
Inventory: In Stock

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Mfr. Part #: BPV11F

Specifications
Product Details

Specifications

Manufacturer Vishay

Product Phototransistors

Package / Case T-1 3/4

Mounting Style Through Hole

Peak Wavelength 930 nm

Operating Supply Voltage 5 V

Maximum On-State Collector Current 50 mA

Collector- Emitter Voltage VCEO Max 70 V

Collector-Emitter Breakdown Voltage 70 V

Collector-Emitter Saturation Voltage 130 mV

Dark Current 50 nA

Pd - Power Dissipation 150 mW

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 100 C

Height 8.6 mm

Length 5.75 mm

Lens Color/Style Water Clear

Packaging Tube

Type Phototransistor

Wavelength 930 nm

Width 5.75 mm

Brand Vishay Semiconductors

Half Intensity Angle Degrees 15 deg

Light Current 9 mA

Product Type Phototransistors

Standard Pack Qty 2000

Subcategory Optical Detectors & Sensors

Product Details

Silicon NPN Phototransistor

Description
BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard Tâ€“1 plastic package.
The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters (Î» p â‰¥ 900nm).
The viewing angle of Â± 15Â° makes it insensible to ambient straylight.
A base terminal is available to enable biasing and sensitivity control.

Features
â— Very high radiant sensitivity
â— Standard Tâ€“1 (Ã¸ 5 mm) package
â— IR filter for GaAs emitters (950 nm)
â— Angle of half sensitivity Ï• = Â± 15Â°
â— Base terminal available

Applications
Detector for industrial electronic circuitry, measurement and control

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Please send inquiry, we will respond immediately.

Mfr. Part #: BPV11F