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BPW17N

Phototransistors T-.75 450 to 1040nm +/-12 deg

Product Category: Phototransistors
Mfr. Part #
BPW17N
Manufacturer: Vishay
Package: Bulk
Lead Free Status /RoHS Status:
Data Sheet: BPW17N Datasheet
Inventory: In Stock

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Mfr. Part #: BPW17N

Specifications
Product Details

Specifications

Manufacturer Vishay

Product Phototransistors

Package / Case T-3/4

Mounting Style Through Hole

Peak Wavelength 825 nm

Maximum On-State Collector Current 50 mA

Collector- Emitter Voltage VCEO Max 32 V

Collector-Emitter Breakdown Voltage 32 V

Collector-Emitter Saturation Voltage 300 mV

Dark Current 200 nA

Pd - Power Dissipation 100 mW

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 100 C

Height 2.9 mm

Length 3.3 mm

Lens Color/Style Water Clear

Packaging Bulk

Type Chip

Wavelength 825 nm

Width 2.4 mm

Brand Vishay Semiconductors

Half Intensity Angle Degrees 12 deg

Light Current 1 mA

Product Type Phototransistors

Standard Pack Qty 5000

Subcategory Optical Detectors & Sensors

Product Details

Description

BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a Â± 12 lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of unlimited size.
Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.

Features

â€¢ Miniature Tâ€“3/4 clear plastic package with lens
â€¢ Narrow viewing angle Ï• = Â± 12Â°
â€¢ Insensitive against background light due to narrow aperture
â€¢ Suitable for 0.1â€ (2.54 mm) center to center spacing
â€¢ Suitable for visible and near infrared radiation
â€¢ Compatible with IR diode CQY37N

Applications

Detector in electronic control and drive circuits

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Please send inquiry, we will respond immediately.

Mfr. Part #: BPW17N