wholesale BSM10GD120DN2 IGBT Modules supplier,manufacturer,distributor

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BSM10GD120DN2

IGBT Modules 1200V 10A FL BRIDGE

  • IGBT Modules
  • BSM10GD120DN2
  • Infineon
  • Tray
  • In Stock
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Mfr. Part #: BSM10GD120DN2

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  • Specifications

Specifications

Manufacturer Infineon
RoHS
Product IGBT Silicon Modules
Configuration Full Bridge
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.7 V
Continuous Collector Current at 25 C 15 A
Gate-Emitter Leakage Current 120 nA
Pd - Power Dissipation 80 W
Package / Case EconoPACK 2
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Height 17 mm
Length 107.5 mm
Technology Si
Width 45.5 mm
Brand Infineon Technologies
Mounting Style Chassis Mount
Maximum Gate Emitter Voltage 20 V
Product Type IGBT Modules
Standard Pack Qty 10
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BSM10GD120DN2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: BSM10GD120DN2

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