wholesale BSM150GB120DN2 IGBT Modules supplier,manufacturer,distributor

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BSM150GB120DN2

IGBT Modules 1200V 150A DUAL

  • IGBT Modules
  • BSM150GB120DN2
  • Infineon
  • Tray
  • In Stock
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Mfr. Part #: BSM150GB120DN2

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  • Specifications

Specifications

Manufacturer Infineon
RoHS
Product IGBT Silicon Modules
Configuration Half Bridge
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 210 A
Gate-Emitter Leakage Current 320 nA
Pd - Power Dissipation 1250 W
Package / Case Half Bridge2
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Height 30 mm
Length 106.4 mm
Technology Si
Width 61.4 mm
Brand Infineon Technologies
Mounting Style Chassis Mount
Maximum Gate Emitter Voltage 20 V
Product Type IGBT Modules
Standard Pack Qty 10
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BSM150GB120DN2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: BSM150GB120DN2

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