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BSM180C12P2E202

Discrete Semiconductor Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02

Product Category: Discrete Semiconductor Modules
Mfr. Part #
BSM180C12P2E202
Manufacturer: ROHM Semiconductor
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: BSM180C12P2E202 Datasheet
Inventory: In Stock

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Mfr. Part #: BSM180C12P2E202

Specifications

Specifications

Manufacturer ROHM Semiconductor

Product Power MOSFET Modules

Type SiC Power Module

Technology SiC

Vf - Forward Voltage 1.6 V at 180 A

Vr - Reverse Voltage 1.2 kV

Vgs - Gate-Source Voltage - 6 V, + 22 V

Mounting Style Screw Mounts

Package / Case Module

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Series BSMx

Packaging Tray

Configuration Chopper

Brand ROHM Semiconductor

Transistor Polarity N-Channel

Typical Delay Time 49 ns

Fall Time 32 ns

Id - Continuous Drain Current 204 A

Pd - Power Dissipation 1360 W

Product Type Discrete Semiconductor Modules

Rise Time 36 ns

Standard Pack Qty 4

Subcategory Discrete Semiconductor Modules

Typical Turn-Off Delay Time 139 ns

Typical Turn-On Delay Time 49 ns

Vds - Drain-Source Breakdown Voltage 1.2 kV

Vgs th - Gate-Source Threshold Voltage 1.6 V

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Mfr. Part #: BSM180C12P2E202