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BSM400D12P3G002

Discrete Semiconductor Modules 1200V 358A HALF BRIDGE SIC

Product Category: Discrete Semiconductor Modules
Mfr. Part #
BSM400D12P3G002
Manufacturer: ROHM Semiconductor
Package: Cardboard Strips
Lead Free Status /RoHS Status:
Data Sheet: BSM400D12P3G002 Datasheet
Inventory: In Stock

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Mfr. Part #: BSM400D12P3G002

Specifications

Specifications

Manufacturer ROHM Semiconductor

Product Power MOSFET Modules

Type SiC Power Module

Technology SiC

Vr - Reverse Voltage 1.2 kV

Vgs - Gate-Source Voltage - 6 V, + 22 V

Mounting Style Screw Mounts

Package / Case Module

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Packaging Cardboard Strips

Brand ROHM Semiconductor

Transistor Polarity N-Channel

Fall Time 55 ns

Id - Continuous Drain Current 358 A

Operating Supply Voltage -

Pd - Power Dissipation 1570 W

Product Type Discrete Semiconductor Modules

Rise Time 55 ns

Standard Pack Qty 4

Subcategory Discrete Semiconductor Modules

Typical Turn-Off Delay Time 240 ns

Typical Turn-On Delay Time 45 ns

Vds - Drain-Source Breakdown Voltage 1.2 kV

Vgs th - Gate-Source Threshold Voltage 5.6 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: BSM400D12P3G002