wholesale BSM50GD120DN2E3226 IGBT Modules supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

BSM50GD120DN2E32

IGBT Modules N-CH 1.2KV 50A

  • IGBT Modules
  • BSM50GD120DN2E3226
  • Infineon
  • Tray
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: BSM50GD120DN2E3226

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications

Specifications

Manufacturer Infineon
Product IGBT Silicon Modules
Configuration Full Bridge
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 72 A
Gate-Emitter Leakage Current 200 nA
Pd - Power Dissipation 350 W
Package / Case EconoPACK 2
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Height 17 mm
Length 107.5 mm
Technology Si
Width 45.5 mm
Brand Infineon Technologies
Mounting Style Chassis Mount
Maximum Gate Emitter Voltage 20 V
Product Type IGBT Modules
Standard Pack Qty 10
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BSM50GD120DN2E32. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: BSM50GD120DN2E3226

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex