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C3M0120100J

MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7

  • MOSFET
  • C3M0120100J
  • Wolfspeed
  • Tube
  • In Stock
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Mfr. Part #: C3M0120100J

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  • Specifications

Specifications

Manufacturer Wolfspeed
RoHS
Technology SiC
Mounting Style SMD/SMT
Package / Case TO-263-7
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1 kV
Id - Continuous Drain Current 22 A
Rds On - Drain-Source Resistance 120 mOhms
Vgs - Gate-Source Voltage - 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage 1.8 V
Qg - Gate Charge 21.5 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 83 W
Channel Mode Enhancement
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand Wolfspeed
Forward Transconductance - Min 7.7 S
Fall Time 8 ns
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 8 ns
Standard Pack Qty 50
Subcategory MOSFETs
Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 7 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the C3M0120100J. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: C3M0120100J

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