wholesale CBB021M12FM3 Discrete Semiconductor Modules supplier,manufacturer,distributor

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CBB021M12FM3

Discrete Semiconductor Modules 1200V, 20A, SiC Six pack Module GEN 3

  • Discrete Semiconductor Modules
  • CBB021M12FM3
  • Wolfspeed
  • Tray
  • CBB021M12FM3 Datasheet
  • In Stock
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Mfr. Part #: CBB021M12FM3

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  • Specifications

Specifications

Manufacturer Wolfspeed
RoHS
Product IGBT Silicon Carbide Modules
Type Half Bridge
Technology SiC
Vr - Reverse Voltage 1.2 kV
Vgs - Gate-Source Voltage 19 V
Mounting Style Through Hole
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Packaging Tray
Brand Wolfspeed
Transistor Polarity N-Channel
Id - Continuous Drain Current 48 A
Pd - Power Dissipation 10 mW
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 27.9 mOhms
Standard Pack Qty 18
Subcategory Discrete Semiconductor Modules
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 1.8 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the CBB021M12FM3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: CBB021M12FM3

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