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CG2H30070F

RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt

Product Category: Transistors RF
Mfr. Part #
CG2H30070F
Manufacturer: Wolfspeed
Package: Tray
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: CG2H30070F

Specifications

Specifications

Manufacturer Wolfspeed

Transistor Type HEMT

Technology GaN

Operating Frequency 500 MHz to 3 GHz

Gain 12.4 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 120 V

Vgs - Gate-Source Breakdown Voltage - 10 V, 2 V

Id - Continuous Drain Current 12 A

Output Power 70 W

Maximum Drain Gate Voltage -

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation -

Mounting Style Screw Mount

Package / Case 440224

Packaging Tray

RF & Wireless RF JFET Transistors

Brand Wolfspeed

Forward Transconductance - Min -

Development Kit CG2H30070F-TB1

Product Type RF JFET Transistors

Standard Pack Qty 1

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 3.8 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: CG2H30070F