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CGH40006S

RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt

  • Transistors RF
  • CGH40006S
  • Wolfspeed
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: CGH40006S

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  • Specifications

Specifications

Manufacturer Wolfspeed
RoHS
Transistor Type HEMT
Technology GaN
Operating Frequency 2 GHz to 6 GHz
Gain 13 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 120 V
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Id - Continuous Drain Current 750 mA
Output Power 6.9 W
Maximum Drain Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation -
Mounting Style SMD/SMT
Package / Case QFN-6
Packaging Cut Tape
Packaging Reel
RF & Wireless RF JFET Transistors
Application -
Configuration Single
Height 1 mm
Length 3.15 mm
Operating Temperature Range -
Product GaN HEMT
Width 3.15 mm
Brand Wolfspeed
Forward Transconductance - Min -
Gate-Source Cutoff Voltage -
Class -
Development Kit CGH40006S-KIT
Fall Time -
Moisture Sensitive Yes
NF - Noise Figure -
P1dB - Compression Point -
Product Type RF JFET Transistors
Rds On - Drain-Source Resistance -
Rise Time -
Standard Pack Qty 200
Subcategory Transistors
Typical Turn-Off Delay Time -
Vgs th - Gate-Source Threshold Voltage - 3 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the CGH40006S. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: CGH40006S

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