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CGH60120D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt

Product Category: Transistors RF
Mfr. Part #
CGH60120D-GP4
Manufacturer: Wolfspeed
Package: Waffle
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: CGH60120D-GP4

Specifications

Specifications

Manufacturer Wolfspeed

Transistor Type HEMT

Technology GaN

Operating Frequency 4 GHz to 6 GHz

Gain 13 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 120 V

Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V

Id - Continuous Drain Current 12 A

Output Power 120 W

Maximum Drain Gate Voltage -

Pd - Power Dissipation -

Mounting Style SMD/SMT

Package / Case Die

Packaging Waffle

RF & Wireless RF JFET Transistors

Application -

Height 100 um

Length 5.26 mm

Operating Temperature Range -

Product GaN HEMT

Width 920 um

Brand Wolfspeed

Gate-Source Cutoff Voltage -

Number of Channels 8 Channel

Class -

Development Kit -

Fall Time -

NF - Noise Figure -

P1dB - Compression Point -

Product Type RF JFET Transistors

Rds On - Drain-Source Resistance 100 mOhms

Rise Time -

Standard Pack Qty 10

Subcategory Transistors

Typical Turn-Off Delay Time -

Vgs th - Gate-Source Threshold Voltage - 3 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: CGH60120D-GP4