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CGHV1F006S

RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt

Product Category: Transistors RF
Mfr. Part #
CGHV1F006S
Manufacturer: Wolfspeed
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: CGHV1F006S

Specifications

Specifications

Manufacturer Wolfspeed

Transistor Type HEMT

Technology GaN

Operating Frequency 18 GHz

Gain 16 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 100 V

Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V

Id - Continuous Drain Current 950 mA

Output Power 6 W

Maximum Drain Gate Voltage -

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation -

Mounting Style SMD/SMT

Package / Case DFN-12

Packaging Cut Tape

Packaging Reel

RF & Wireless RF JFET Transistors

Application -

Configuration Single

Operating Temperature Range - 40 C to + 150 C

Brand Wolfspeed

Forward Transconductance - Min -

Gate-Source Cutoff Voltage -

Class -

Moisture Sensitive Yes

NF - Noise Figure -

P1dB - Compression Point -

Product Type RF JFET Transistors

Rds On - Drain-Source Resistance -

Standard Pack Qty 250

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 3 V

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Mfr. Part #: CGHV1F006S