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CGHV35150F

RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt

Product Category: Transistors RF
Mfr. Part #
CGHV35150F
Manufacturer: Wolfspeed
Package: Tray
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: CGHV35150F

Specifications

Specifications

Manufacturer Wolfspeed

Transistor Type HEMT

Technology GaN

Operating Frequency 3.1 GHz to 3.5 GHz

Gain 13.3 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 150 V

Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V

Id - Continuous Drain Current 12 A

Output Power 170 W

Maximum Drain Gate Voltage -

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation -

Mounting Style Screw Mount

Package / Case 440193

Packaging Tray

RF & Wireless RF JFET Transistors

Application -

Configuration Single

Height -

Length -

Operating Temperature Range -

Product GaN HEMT

Width -

Brand Wolfspeed

Forward Transconductance - Min -

Gate-Source Cutoff Voltage -

Class -

Development Kit CGHV35150-TB

Fall Time -

NF - Noise Figure -

P1dB - Compression Point -

Product Type RF JFET Transistors

Rds On - Drain-Source Resistance -

Rise Time -

Standard Pack Qty 1

Subcategory Transistors

Typical Turn-Off Delay Time -

Vgs th - Gate-Source Threshold Voltage - 3 V

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Mfr. Part #: CGHV35150F