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CGHV60170D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt

Product Category: Transistors RF
Mfr. Part #
CGHV60170D-GP4
Manufacturer: Wolfspeed
Package: Gel Pack
Lead Free Status /RoHS Status:
Data Sheet: CGHV60170D-GP4 Datasheet
Inventory: In Stock

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Mfr. Part #: CGHV60170D-GP4

Specifications

Specifications

Manufacturer Wolfspeed

Transistor Type HEMT

Technology GaN

Operating Frequency 6 GHz

Gain 18 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage -

Id - Continuous Drain Current 12.6 A

Output Power 170 W

Maximum Drain Gate Voltage -

Pd - Power Dissipation -

Mounting Style SMD/SMT

Package / Case Die

Packaging Gel Pack

RF & Wireless RF JFET Transistors

Application -

Height 100 um

Length 5.4 mm

Operating Temperature Range -

Product GaN HEMT

Width 820 um

Brand Wolfspeed

Forward Transconductance - Min -

Gate-Source Cutoff Voltage -

Number of Channels 8 Channel

Development Kit -

Fall Time -

NF - Noise Figure -

P1dB - Compression Point -

Product Type RF JFET Transistors

Rds On - Drain-Source Resistance -

Rise Time -

Standard Pack Qty 10

Subcategory Transistors

Typical Turn-Off Delay Time -

Vgs th - Gate-Source Threshold Voltage -

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Mfr. Part #: CGHV60170D-GP4