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CGHV96050F1

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt

  • Transistors RF
  • CGHV96050F1
  • Wolfspeed
  • Tray
  • In Stock
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Mfr. Part #: CGHV96050F1

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  • Specifications

Specifications

Manufacturer Wolfspeed
RoHS
Transistor Type HEMT
Technology GaN
Operating Frequency 7.9 GHz to 9.6 GHz
Gain 16 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Id - Continuous Drain Current 6 A
Output Power 80 W
Maximum Drain Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation -
Mounting Style Screw Mount
Package / Case 440210
Packaging Tray
RF & Wireless RF JFET Transistors
Application -
Configuration Single
Height 5.03 mm
Length 17.55 mm
Operating Temperature Range -
Product GaN HEMT
Width 24.26 mm
Brand Wolfspeed
Forward Transconductance - Min -
Gate-Source Cutoff Voltage -
Class -
Development Kit CGHV96050F1-TB
Fall Time -
NF - Noise Figure -
P1dB - Compression Point -
Product Type RF JFET Transistors
Rds On - Drain-Source Resistance -
Rise Time -
Standard Pack Qty 1
Subcategory Transistors
Typical Turn-Off Delay Time -
Vgs th - Gate-Source Threshold Voltage - 3 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the CGHV96050F1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: CGHV96050F1

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