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CJ3139KDW-G

MOSFET MOSFET DUAL P-CHANNEL

Product Category: MOSFET
Mfr. Part #
CJ3139KDW-G
Manufacturer: Comchip Technology
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: CJ3139KDW-G Datasheet
Inventory: In Stock

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Mfr. Part #: CJ3139KDW-G

Specifications

Specifications

Manufacturer Comchip Technology

Technology Si

Mounting Style SMD/SMT

Package / Case SOT-363-6

Transistor Polarity P-Channel

Number of Channels 2 Channel

Vds - Drain-Source Breakdown Voltage 20 V

Id - Continuous Drain Current 660 mA

Rds On - Drain-Source Resistance 520 mOhms

Vgs - Gate-Source Voltage - 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage 350 mV

Qg - Gate Charge -

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 150 mW

Channel Mode Enhancement

Packaging Cut Tape

Packaging Reel

Configuration Dual

Brand Comchip Technology

Forward Transconductance - Min 0.8 S

Fall Time 20.3 ns

Product Type MOSFET

Rise Time 5.8 ns

Standard Pack Qty 3000

Subcategory MOSFETs

Typical Turn-Off Delay Time 32.7 ns

Typical Turn-On Delay Time 9 ns

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Mfr. Part #: CJ3139KDW-G