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D3S0280N65B-U

MOSFET 280 mOhm 650V Superjunction Power MOSFET in TO-220

  • MOSFET
  • D3S280N65B-U
  • D3 Semiconductor
  • Tube
  • D3S280N65B-U Datasheet
  • In Stock
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Mfr. Part #: D3S280N65B-U

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  • Specifications

Specifications

Manufacturer D3 Semiconductor
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 12.5 A
Rds On - Drain-Source Resistance 260 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 22.2 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 99 W
Channel Mode Enhancement
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand D3
Fall Time 27 ns
Product Type MOSFET
Rise Time 26 ns
Standard Pack Qty 50
Subcategory MOSFETs
Typical Turn-Off Delay Time 42 ns
Typical Turn-On Delay Time 13 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the D3S0280N65B-U. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: D3S280N65B-U

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