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DMN61D8LVTQ-13

MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson

Product Category: MOSFET
Mfr. Part #
DMN61D8LVTQ-13
Manufacturer: Diodes Incorporated
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: DMN61D8LVTQ-13 Datasheet
Inventory: In Stock

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Mfr. Part #: DMN61D8LVTQ-13

Specifications

Specifications

Manufacturer Diodes Incorporated

Technology Si

Mounting Style SMD/SMT

Package / Case TSOT-26-6

Transistor Polarity N-Channel

Number of Channels 2 Channel

Vds - Drain-Source Breakdown Voltage 60 V

Id - Continuous Drain Current 630 mA

Rds On - Drain-Source Resistance 1.1 Ohms

Vgs - Gate-Source Voltage - 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage 1.3 V

Qg - Gate Charge 740 pC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 1.09 W

Channel Mode Enhancement

Qualification AEC-Q101

Series DMN61

Packaging Reel

Configuration Dual

Height 1 mm

Length 2.9 mm

Transistor Type 2 N-Channel

Width 1.6 mm

Brand Diodes Incorporated

Forward Transconductance - Min 80 mS

Fall Time 440 ns

Product Type MOSFET

Rise Time 301 ns

Standard Pack Qty 10000

Subcategory MOSFETs

Typical Turn-Off Delay Time 582 ns

Typical Turn-On Delay Time 131 ns

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Mfr. Part #: DMN61D8LVTQ-13