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DMNH10H028SK3-13

MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W

Product Category: MOSFET
Mfr. Part #
DMNH10H028SK3-13
Manufacturer: Diodes Incorporated
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: DMNH10H028SK3-13 Datasheet
Inventory: In Stock

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Mfr. Part #: DMNH10H028SK3-13

Specifications

Specifications

Manufacturer Diodes Incorporated

Technology Si

Mounting Style SMD/SMT

Package / Case TO-252-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 100 V

Id - Continuous Drain Current 55 A

Rds On - Drain-Source Resistance 28 mOhms

Vgs - Gate-Source Voltage - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

Qg - Gate Charge 36 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 2 W

Channel Mode Enhancement

Series DMNH10H0

Packaging Cut Tape

Packaging Reel

Configuration Single

Height 2.29 mm

Length 6.58 mm

Transistor Type 1 N-Channel

Width 6.1 mm

Brand Diodes Incorporated

Fall Time 4.8 ns

Product Type MOSFET

Rise Time 5.8 ns

Standard Pack Qty 2500

Subcategory MOSFETs

Typical Turn-Off Delay Time 17.8 ns

Typical Turn-On Delay Time 6.4 ns

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Mfr. Part #: DMNH10H028SK3-13