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F3L11MR12W2M1B74

Discrete Semiconductor Modules LOW POWER EASY

Product Category: Discrete Semiconductor Modules
Mfr. Part #
F3L11MR12W2M1B74BOMA1
Manufacturer: Infineon
Package: Tray
Data Sheet: F3L11MR12W2M1B74BOMA1 Datasheet
Inventory: In Stock

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Mfr. Part #: F3L11MR12W2M1B74BOMA1

Specifications

Specifications

Manufacturer Infineon

Product IGBT Silicon Carbide Modules

Type CoolSiC MOSFET

Technology SiC

Vf - Forward Voltage 4.6 V

Vr - Reverse Voltage 1.2 kV

Vgs - Gate-Source Voltage - 10 V, 20 V

Mounting Style Press Fit

Package / Case Module

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Packaging Tray

Configuration 3-Phase

Brand Infineon Technologies

Transistor Polarity N-Channel

Fall Time 18.5 ns

Id - Continuous Drain Current 100 A

Operating Supply Voltage -

Pd - Power Dissipation 20 mW (1/50 W)

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 11.3 mOhms

Rise Time 23.4 ns

Standard Pack Qty 15

Subcategory Discrete Semiconductor Modules

Typical Turn-Off Delay Time 82.9 ns

Typical Turn-On Delay Time 26.7 ns

Vds - Drain-Source Breakdown Voltage 1.2 kV

Vgs th - Gate-Source Threshold Voltage 5.55 V

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Mfr. Part #: F3L11MR12W2M1B74BOMA1