wholesale FDG6301N_F085 FETs - Arrays supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

FDG6301N_F085

MOSFET 220mA 2 N-Channel (Dual) Surface Mount -55°C ~ 150°C (TJ) 6-TSSOP, SC-88, SOT-363 300mW Automotive, AEC-Q101 25V

  • FETs - Arrays
  • FDG6301N_F085
  • onsemi
  • 6-TSSOP, SC-88, SOT-363
  • FDG6301N_F085 Datasheet
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: FDG6301N_F085

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category FETs - Arrays
Series Automotive, AEC-Q101
Packaging Alternate Packaging
Unit-Weight 0.000988 oz
Mounting-Style SMD/SMT
Package-Case 6-TSSOP, SC-88, SOT-363
Technology Si
Operating-Temperature -55°C ~ 150°C (TJ)
Mounting-Type Surface Mount
Number-of-Channels 2 Channel
Supplier-Device-Package SC-70-6
Configuration Dual
FET-Type 2 N-Channel (Dual)
Power-Max 300mW
Transistor-Type 2 N-Channel
VDSS – Drain-Source Voltage 25V
Input Capacitance 9.5pF @ 10V
FET-Feature Logic Level Gate
Current-Continuous-Drain-Id-25°C 220mA
Rds-On-Max-Id-Vgs 4 Ohm @ 220mA, 4.5V
Vgs-th-Max-Id 1.5V @ 250μA
Gate-Charge-Qg-Vgs 0.4nC @ 4.5V
Pd-Power-Dissipation 300 mW
Maximum Operating Temperature + 150 C
Operating temperature range - 55 C
Vgs-Gate-Source-Voltage 8 V
ID (drain current) 220 mA
Vds-Drain-Source-Breakdown-Voltage 25 V
Rds-On-Drain-Source-Resistance 7 Ohms
Transistor-Polarity N-Channel

Product Details

General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Features
â–  25 V, 0.22 A continuous, 0.65 A peak.
RDS(ON) = 4 Ω @ VGS= 4.5 V,
RDS(ON) = 5 Ω @ VGS= 2.7 V.
â–  Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
â–  Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
â–  Compact industry standard SC70-6 surface mount
package.
â–  RoHS Compliant
â–  Qualified to AEC Q101

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FDG6301N_F085. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: FDG6301N_F085

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex
Contact Us
+1 (620)699-8580
sales@icchips.com
8 Marina View, Asia Square Tower 1, #42-01 & #43-01, Singapore, 018960
PayPalWestern UnionUPSDHLFedExEMSTNTaramex

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.