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FDG6313N

MOSFET 500mA 2 N-Channel (Dual) Surface Mount -55°C ~ 150°C (TJ) 6-TSSOP, SC-88, SOT-363 300mW 25V

  • FETs - Arrays
  • FDG6313N
  • onsemi
  • 6-TSSOP, SC-88, SOT-363
  • FDG6313N Datasheet
  • In Stock
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Mfr. Part #: FDG6313N

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  • Product Details

Product Details

General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Features

25 V, 0.50 A continuous, 1.5 A peak.
RDS(ON) = 0.45 Ω @ VGS= 4.5 V,
RDS(ON) =0.60 Ω @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FDG6313N. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: FDG6313N

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