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FDG6321
- Product Category: FETs - Arrays
- Mfr. Part # FDG6321
- Package: SOT-363
- Lead Free Status /RoHS Status:
- Data Sheet: FDG6321 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: FDG6321
- Product Details
Product Details
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.Features
■N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V. RDS(ON) = 0.60 Ω @ VGS= 2.7 V.■P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V. RDS(ON) = 1.5 Ω @ VGS= -2.7V.
â– Very small package outline SC70-6.
â– Very low level gate drive requirements allowing direct operation in 3 V circuits(VGS(th) < 1.5 V).
â– Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FDG6321. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
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Please send inquiry, we will respond immediately.
Mfr. Part #: FDG6321
