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FDS8928A

MOSFET 5.5A, 4A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 900mW 30V, 20V

Product Category: FETs - Arrays
Mfr. Part #
FDS8928A
Manufacturer: onsemi
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: FDS8928A Datasheet
Inventory: In Stock

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Mfr. Part #: FDS8928A

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category FETs - Arrays

Series -

Packaging Alternate Packaging

Part-Aliases FDS8928A_NL

Unit-Weight 0.006596 oz

Mounting-Style SMD/SMT

Package-Case 8-SOIC (0.154", 3.90mm Width)

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 8-SO

Configuration N-Channel P-Channel

FET-Type N and P-Channel

Power-Max 900mW

Transistor-Type 1 N-Channel 1 P-Channel

VDSS â€“ Drain-Source Voltage 30V, 20V

Input Capacitance 900pF @ 10V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 5.5A, 4A

Rds-On-Max-Id-Vgs 30 mOhm @ 5.5A, 4.5V

Vgs-th-Max-Id 1V @ 250Î¼A

Gate-Charge-Qg-Vgs 28nC @ 4.5V

Pd-Power-Dissipation 2 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Fall-Time 13 ns 90 ns

Rise-Time 19 ns 23 ns

Vgs-Gate-Source-Voltage 8 V

ID (drain current) 5.5 A

Vds-Drain-Source-Breakdown-Voltage 30 V - 20 V

Rds-On-Drain-Source-Resistance 30 mOhms 55 mOhms

Transistor-Polarity N-Channel P-Channel

Typical-Turn-Off-Delay-Time 42 ns 260 ns

Turn-On Delay Time 6 ns 8 ns

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

20 S 13 S Channel-Mode

Product Details

Description

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

â– N-Channel 5.5 A,30 V,
RDS(ON)=0.030 W @ VGS=4.5 V
RDS(ON)=0.038 W @ VGS=2.5 V.
â– P-Channel -4 A,-20 V,
RDS(ON)=0.055 W @ VGS=-4.5 V
RDS(ON)=0.072 W @ VGS=-2.5 V.
â– High density cell design for extremely low RDS(ON).
â– High power and current handling capability in a widely used surface mount package.
â– Dual (N & P-Channel) MOSFET in surface mount package.

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Mfr. Part #: FDS8928A