wholesale FF150R12KE3G_B2 IGBT Modules supplier,manufacturer,distributor

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FF150R12KE3G_B2

IGBT Modules N-CH 1.2KV 225A

  • IGBT Modules
  • FF150R12KE3G_B2
  • Infineon
  • Tray
  • FF150R12KE3G_B2 Datasheet
  • In Stock
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Mfr. Part #: FF150R12KE3G_B2

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  • Specifications

Specifications

Manufacturer Infineon
Product IGBT Silicon Modules
Configuration Dual
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 225 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 780 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Packaging Tray
Technology Si
Brand Infineon Technologies
Product Type IGBT Modules
Standard Pack Qty 10
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FF150R12KE3G_B2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: FF150R12KE3G_B2

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