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FGA50N100BNTD2

IGBT 50A NPT and Trench Through Hole 156W 75ns TO-3PN 1000V

Product Category: IGBTs - Single
Mfr. Part #
FGA50N100BNTD2
Manufacturer: onsemi
Package: TO-3P-3, SC-65-3
Lead Free Status /RoHS Status:
Data Sheet: FGA50N100BNTD2 Datasheet
Inventory: In Stock

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Mfr. Part #: FGA50N100BNTD2

Specifications

Specifications

Manufacturer onsemi

Product Category IGBTs - Single

Series -

Packaging Tube

Unit-Weight 0.225789 oz

Mounting-Style Through Hole

Package-Case TO-3P-3, SC-65-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-3PN

Configuration Single

Power-Max 156W

Reverse-Recovery-Time-trr 75ns

Electric current collectors 50A

Voltage-Collector-Emitter-Breakdown-Max 1000V

IGBT-Type NPT and Trench

Current-Collector-Pulsed-Icm 200A

Vce-on-Max-Vge-Ic 2.9V @ 15V, 60A

Switching-Energy -

Total Gate Charge 257nC

Td-on-off-25Â°C 34ns/243ns

Test-Condition 600V, 60A, 10 Ohm, 15V

Pd-Power-Dissipation 156 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 1000 V

Collector-Emitter-Saturation-Voltage 1.5 V

Continuous-Collector-Current-at-25-C 50 A

Gate-Emitter-Leakage-Current 500 nA

Maximum-Gate-Emitter-Voltage 25 V

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Mfr. Part #: FGA50N100BNTD2