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FGAF40N60UFTU

IGBT Transistors 40A/600V/ IGBT

  • IGBT Transistors
  • FGAF40N60UFTU
  • onsemi
  • Tube
  • FGAF40N60UFTU Datasheet
  • In Stock
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Mfr. Part #: FGAF40N60UFTU

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  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
RoHS
Technology Si
Package / Case TO-3PF-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 3.1 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 40 A
Pd - Power Dissipation 100 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series FGAF40N60UF
Packaging Tube
Continuous Collector Current Ic Max 40 A
Height 16.7 mm
Length 15.7 mm
Width 5.7 mm
Brand onsemi / Fairchild
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs

Product Details

General Description

Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

Features

• Maximum Junction Temperature : TJ = 175°C
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A
• High Input Impedance
• Fast Swiching: EOFF = 7 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant

Applications

• Sewing Machine, CNC
• Home Appliances, Motor-Control

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FGAF40N60UFTU. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: FGAF40N60UFTU

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