wholesale FGY100T120RWD IGBT Transistors supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

FGY100T120RWD

IGBT Transistors 1200V, 100A Trench Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging IGBT ? Power, Co-PAK

  • IGBT Transistors
  • FGY100T120RWD
  • onsemi
  • Tube
  • FGY100T120RWD Datasheet
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: FGY100T120RWD

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications

Specifications

Manufacturer onsemi
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.43 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 200 A
Pd - Power Dissipation 1.495 kW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 200 A
Brand onsemi
Gate-Emitter Leakage Current 400 nA
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FGY100T120RWD. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: FGY100T120RWD

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex