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FQPF6N80

MOSFET N-CH 800V 3.3A TO-220F

Product Category: FETs - Single
Mfr. Part #
FQPF6N80
Manufacturer: Fairchild Semiconductor
Package: TO-220-3 Full Pack
Lead Free Status /RoHS Status:
Data Sheet: FQPF6N80 Datasheet
Inventory: In Stock

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Mfr. Part #: FQPF6N80

Specifications
Product Details

Specifications

Manufacturer Fairchild Semiconductor

Product Category FETs - Single

Categories Transistors - FETs, MOSFETs - Single

Manufacturer ON Semiconductor

Series QFET?

Packaging Tube

Part-Status Obsolete

FET-Type N-Channel

Technology MOSFET (Metal Oxide)

Drain-to-Source-Voltage-Vdss 800V

Current-Continuous-Drain-Id-25Â°C 3.3A (Tc)

Drive-Voltage-Max-Rds-On-Min-Rds-On 10V

Vgs-th-Max-Id 5V @ 250?A

Gate-Charge-Qg-Max-Vgs 31nC @ 10V

Vgs-Max Â±30V

Input-Capacitance-Ciss-Max-Vds 1500pF @ 25V

FET-Feature -

Power-Dissipation-Max 51W (Tc)

Rds-On-Max-Id-Vgs 1.95 Ohm @ 1.65A, 10V

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Through Hole

Supplier-Device-Package TO-220F

Package-Case TO-220-3 Full Pack

Product Details

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchildâ€™s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features

â€¢ 3.3A, 800V, RDS(on) = 1.95â„¦ @VGS = 10 V
â€¢ Low gate charge ( typical 31 nC)
â€¢ Low Crss ( typical 14 pF)
â€¢ Fast switching
â€¢ 100% avalanche tested
â€¢ Improved dv/dt capability

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Mfr. Part #: FQPF6N80