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G18N120BN
- Product Category: IGBTs - Single
- Mfr. Part # G18N120BN
- Package: TO-247
- Lead Free Status /RoHS Status:
- Data Sheet: G18N120BN Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: G18N120BN
- Product Details
Product Details
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Features
• 54A, 1200V, TC = 25°C• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model www.intersil.com
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the G18N120BN. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: G18N120BN