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G2R1000MT17D

MOSFET 1700V 1000mO TO-247-3 G2R SiC MOSFET

Product Category: MOSFET
Mfr. Part #
G2R1000MT17D
Manufacturer: GeneSiC Semiconductor
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: G2R1000MT17D

Specifications

Specifications

Manufacturer GeneSiC Semiconductor

Technology SiC

Mounting Style Through Hole

Package / Case TO-247-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 1.7 kV

Id - Continuous Drain Current 5 A

Rds On - Drain-Source Resistance 1 Ohms

Vgs - Gate-Source Voltage - 5 V, + 20 V

Vgs th - Gate-Source Threshold Voltage 4.5 V

Qg - Gate Charge 11 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 44 W

Channel Mode Enhancement

Series G2R

Packaging Tube

Configuration Single

Product MOSFET

Transistor Type MOSFET

Type SiC MOSFET

Brand GeneSiC Semiconductor

Forward Transconductance - Min 0.76 S

Fall Time 16 ns

Product Type MOSFET

Rise Time 19 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 13 ns

Typical Turn-On Delay Time 11 ns

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Mfr. Part #: G2R1000MT17D