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GA20SICP12-263

Power Driver Module Single 20A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube GA20SICP12 1200V

Product Category: Power Driver Modules
Mfr. Part #
GA20SICP12-263
Manufacturer: GeneSiC Semiconductor
Package: TO-263-8, DÂ²Pak (7 Leads + Tab), TO-263CA
Lead Free Status /RoHS Status:
Data Sheet: GA20SICP12-263 Datasheet
Inventory: In Stock

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Mfr. Part #: GA20SICP12-263

Specifications
Product Details

Specifications

Manufacturer GeneSiC Semiconductor

Product Category Power Driver Modules

Series GA20SICP12

Type -

Packaging Tube

Unit-Weight 0.056438 oz

Mounting-Style SMD/SMT

Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technology SiC

Number-of-Channels 1 Channel

Configuration Single

Current 20A

Voltage 1200V

Voltage-Isolation -

Pd-Power-Dissipation 282 W

Maximum Operating Temperature + 175 C

Operating temperature range - 55 C

Vgs-Gate-Source-Voltage 30 V

ID (drain current) 45 A

Vds-Drain-Source-Breakdown-Voltage 1.2 kV

Rds-On-Drain-Source-Resistance 50 mOhms

Transistor-Polarity N-Channel

Qg-Gate-Charge 100 nC

Channel-Mode Enhancement

Product Details

DESCRIPTION

The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs.

FEATURES

â— Rise Time : 10ns
â— Delay Time : 10ns
â— Recovery Time : 0.5Î¼S
â— Pulse Current : to 100A
â— Turn-on with 20ns, 10mA Gate Pulse

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