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GCMS080A120S1-E1

Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm

Product Category: Discrete Semiconductor Modules
Mfr. Part #
GCMS080A120S1-E1
Manufacturer: SemiQ
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: GCMS080A120S1-E1 Datasheet
Inventory: In Stock

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Mfr. Part #: GCMS080A120S1-E1

Specifications

Specifications

Manufacturer SemiQ

Product Power MOSFET Modules

Type SiC Power Module

Technology SiC

Vf - Forward Voltage 1.54 V

Vr - Reverse Voltage 1.2 kV

Vgs - Gate-Source Voltage - 10 V, + 25 V

Mounting Style Screw Mounts

Package / Case SOT-227-4

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Packaging Tube

Brand SemiQ

Transistor Polarity N-Channel and SBD

Fall Time 35 ns

Id - Continuous Drain Current 120 A

Operating Supply Voltage -

Pd - Power Dissipation 640 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 80 mOhms

Rise Time 53 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Typical Turn-Off Delay Time 27 ns

Typical Turn-On Delay Time 15 ns

Vds - Drain-Source Breakdown Voltage 1.2 kV

Vgs th - Gate-Source Threshold Voltage 2 V

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Mfr. Part #: GCMS080A120S1-E1