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GP2T080A120H

MOSFET SiC MOSFET 1200V 80mohm TO-247-4L

Product Category: MOSFET
Mfr. Part #
GP2T080A120H
Manufacturer: SemiQ
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: GP2T080A120H Datasheet
Inventory: In Stock

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Mfr. Part #: GP2T080A120H

Specifications

Specifications

Manufacturer SemiQ

Technology SiC

Mounting Style Through Hole

Package / Case TO-247-4

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 1.2 kV

Id - Continuous Drain Current 35 A

Rds On - Drain-Source Resistance 100 mOhms

Vgs - Gate-Source Voltage - 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage 4 V

Qg - Gate Charge 61 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 188 W

Channel Mode Depletion

Packaging Tube

Transistor Type 1 N-Channel

Brand SemiQ

Fall Time 10 ns

Product Type MOSFET

Rise Time 4 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 15 ns

Typical Turn-On Delay Time 9 ns

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Mfr. Part #: GP2T080A120H