wholesale GP2T080A120U MOSFET supplier,manufacturer,distributor

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GP2T080A120U

MOSFET

  • MOSFET
  • GP2T080A120U
  • SemiQ
  • Tube
  • GP2T080A120U Datasheet
  • In Stock
  • Unit Price:
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  • Quantity:
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Mfr. Part #: GP2T080A120U

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  • Specifications

Specifications

Manufacturer SemiQ
RoHS
Technology SiC
Mounting Style Through Hole
Package / Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV
Rds On - Drain-Source Resistance 80 mOhms
Vgs - Gate-Source Voltage - 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.8 V
Qg - Gate Charge 58 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 188 W
Channel Mode Enhancement
Series GP2T080A120U
Packaging Tube
Configuration Single
Brand SemiQ
Fall Time 10 ns
Product Type MOSFET
Rise Time 6 ns
Standard Pack Qty 30
Subcategory MOSFETs
Typical Turn-Off Delay Time 16 ns
Typical Turn-On Delay Time 10 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the GP2T080A120U. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: GP2T080A120U

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