wholesale GS66506T-TR MOSFET supplier,manufacturer,distributor

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GS66506T-TR

MOSFET 650V, 22.5A, GaN E-mode, GaNPX package, Top-side cooled

  • MOSFET
  • GS66506T-TR
  • GaN Systems
  • Cut Tape/Reel
  • GS66506T-TR Datasheet
  • In Stock
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Mfr. Part #: GS66506T-TR

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  • Specifications

Specifications

Manufacturer GaN Systems
RoHS
Technology GaN
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 22.5 A
Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage - 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage 2.6 V
Qg - Gate Charge 4.5 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Tradename GaNPX
Series GS665xx
Packaging Cut Tape
Packaging Reel
Configuration Single
Transistor Type E-HEMT Power Transistor
Brand GaN Systems
Moisture Sensitive Yes
Product Type MOSFET
Standard Pack Qty 3000
Subcategory MOSFETs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the GS66506T-TR. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: GS66506T-TR

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