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GS66508T-MR

MOSFET 650V, 30A, GaN E-mode, GaNPX package, Top-side cooled

Product Category: MOSFET
Mfr. Part #
GS66508T-MR
Manufacturer: GaN Systems
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: GS66508T-MR Datasheet
Inventory: In Stock

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Mfr. Part #: GS66508T-MR

Specifications

Specifications

Manufacturer GaN Systems

Technology GaN-on-Si

Mounting Style SMD/SMT

Package / Case DIE

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 650 V

Id - Continuous Drain Current 30 A

Rds On - Drain-Source Resistance 63 mOhms

Vgs - Gate-Source Voltage - 10 V, + 7 V

Vgs th - Gate-Source Threshold Voltage 1.1 V

Qg - Gate Charge 6.1 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation -

Channel Mode Enhancement

Tradename GaNPX

Series GS665xx

Packaging Cut Tape

Packaging Reel

Configuration Single

Transistor Type E-HEMT Power Transistor

Brand GaN Systems

Development Kit GS665MB--EVB, GS66508T-EVBDB2

Fall Time 5.2 ns

Moisture Sensitive Yes

Product Type MOSFET

Rise Time 3.7 ns

Standard Pack Qty 250

Subcategory MOSFETs

Typical Turn-Off Delay Time 8 ns

Typical Turn-On Delay Time 4.1 ns

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Mfr. Part #: GS66508T-MR