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GT15J341S4X

IGBT Transistors Pb-F DISCRETE IGBT TRANSISTOR TO-220SIS P=30W F=1MHZ

Product Category: IGBT Transistors
Mfr. Part #
GT15J341,S4X
Manufacturer: Toshiba
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: GT15J341,S4X

Specifications

Specifications

Manufacturer Toshiba

Technology Si

Package / Case TO-220SIS-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 600 V

Collector-Emitter Saturation Voltage 1.5 V

Maximum Gate Emitter Voltage - 25 V, 25 V

Continuous Collector Current at 25 C 15 A

Pd - Power Dissipation 30 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series GT15J341

Packaging Tube

Continuous Collector Current Ic Max 60 A

Brand Toshiba

Gate-Emitter Leakage Current 100 nA

Product Type IGBT Transistors

Standard Pack Qty 50

Subcategory IGBTs

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Please send inquiry, we will respond immediately.

Mfr. Part #: GT15J341,S4X