wholesale GT30N135SRA,S1E IGBT Transistors supplier,manufacturer,distributor

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GT30N135SRAS1E

IGBT Transistors DISCRETE IGBT TRANS 1350V

  • IGBT Transistors
  • GT30N135SRA,S1E
  • Toshiba
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: GT30N135SRA,S1E

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Technology Si
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.35 kV
Collector-Emitter Saturation Voltage 2.15 V
Maximum Gate Emitter Voltage - 25 V, 25 V
Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 348 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Cut Tape
Packaging Reel
Brand Toshiba
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the GT30N135SRAS1E. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: GT30N135SRA,S1E

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