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GT50J341Q

IGBT Transistors Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V

Product Category: IGBT Transistors
Mfr. Part #
GT50J341,Q
Manufacturer: Toshiba
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: GT50J341,Q

Specifications

Specifications

Manufacturer Toshiba

Technology Si

Package / Case TO-3PN-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 600 V

Collector-Emitter Saturation Voltage 1.6 V

Maximum Gate Emitter Voltage - 25 V, 25 V

Continuous Collector Current at 25 C 50 A

Pd - Power Dissipation 200 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Series GT50J341

Packaging Tube

Continuous Collector Current Ic Max 100 A

Brand Toshiba

Gate-Emitter Leakage Current 100 nA

Product Type IGBT Transistors

Standard Pack Qty 50

Subcategory IGBTs

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Mfr. Part #: GT50J341,Q