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GT50JR21STA1ES

IGBT Transistors Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ

Product Category: IGBT Transistors
Mfr. Part #
GT50JR21(STA1,E,S)
Manufacturer: Toshiba
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: GT50JR21(STA1,E,S)

Specifications

Specifications

Manufacturer Toshiba

Technology Si

Package / Case TO-3PN-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 600 V

Collector-Emitter Saturation Voltage 1.45 V

Maximum Gate Emitter Voltage - 25 V, 25 V

Continuous Collector Current at 25 C 50 A

Pd - Power Dissipation 230 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Series GT50JR21

Packaging Tube

Continuous Collector Current Ic Max 100 A

Brand Toshiba

Gate-Emitter Leakage Current 100 nA

Product Type IGBT Transistors

Standard Pack Qty 25

Subcategory IGBTs

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Please send inquiry, we will respond immediately.

Mfr. Part #: GT50JR21(STA1,E,S)