wholesale GT50JR22(STA1,E,S) IGBT Transistors supplier,manufacturer,distributor

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GT50JR22(STA1ES)

IGBT Transistors IGBT for Soft Switching Apps

  • IGBT Transistors
  • GT50JR22(STA1,E,S)
  • Toshiba
  • Tube
  • In Stock
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Mfr. Part #: GT50JR22(STA1,E,S)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Technology Si
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.55 V
Maximum Gate Emitter Voltage - 25 V, 25 V
Continuous Collector Current at 25 C 50 A
Pd - Power Dissipation 230 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series GT50JR22
Packaging Tube
Brand Toshiba
Product Type IGBT Transistors
Standard Pack Qty 25
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the GT50JR22(STA1ES). As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: GT50JR22(STA1,E,S)

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