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GTRA362802FCV1R0

RF JFET Transistors 280W GaN HEMT 48V 3400 to 3600MHz

  • Transistors RF
  • GTRA362802FC-V1-R0
  • Wolfspeed
  • Cut Tape/Reel
  • GTRA362802FC-V1-R0 Datasheet
  • In Stock
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Mfr. Part #: GTRA362802FC-V1-R0

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  • Specifications

Specifications

Manufacturer Wolfspeed
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.4 GHz to 3.6 GHz
Gain 13.5 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 125 V
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Id - Continuous Drain Current 5.4 A
Output Power 280 W
Minimum Operating Temperature -
Maximum Operating Temperature + 225 C
Pd - Power Dissipation -
Mounting Style Flange Mount
Package / Case H-37248C-4
Packaging Cut Tape
Packaging Reel
RF & Wireless RF JFET Transistors
Application Cellular Power Amplifier
Brand Wolfspeed
Forward Transconductance - Min -
Product Type RF JFET Transistors
Rds On - Drain-Source Resistance -
Standard Pack Qty 50
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the GTRA362802FCV1R0. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: GTRA362802FC-V1-R0

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