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GTVA107001ECV1R0

RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W

  • Transistors RF
  • GTVA107001EC-V1-R0
  • Wolfspeed
  • Cut Tape/Reel
  • GTVA107001EC-V1-R0 Datasheet
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Mfr. Part #: GTVA107001EC-V1-R0

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  • Specifications

Specifications

Manufacturer Wolfspeed
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 960 MHz to 1.215 GHz
Gain 18 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 150 V
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Id - Continuous Drain Current 10 A
Output Power 890 W
Maximum Drain Gate Voltage -
Mounting Style Screw Mount
Package / Case H-36248-2
Packaging Cut Tape
Packaging Reel
RF & Wireless RF JFET Transistors
Brand Wolfspeed
Product Type RF JFET Transistors
Standard Pack Qty 50
Subcategory Transistors
Vgs th - Gate-Source Threshold Voltage - 3 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the GTVA107001ECV1R0. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: GTVA107001EC-V1-R0

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