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HGTD1N120BNS9A

IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series

Product Category: IGBT Transistors
Mfr. Part #
HGTD1N120BNS9A
Manufacturer: onsemi
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: HGTD1N120BNS9A

Specifications

Specifications

Manufacturer onsemi

Technology Si

Package / Case DPAK-3

Mounting Style SMD/SMT

Configuration Single

Collector- Emitter Voltage VCEO Max 1.2 kV

Collector-Emitter Saturation Voltage 2.5 V

Maximum Gate Emitter Voltage - 20 V, + 20 V

Continuous Collector Current at 25 C 5.3 A

Pd - Power Dissipation 60 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series HGTD1N120BNS

Packaging Cut Tape

Packaging Reel

Continuous Collector Current Ic Max 5.3 A

Height 2.3 mm

Length 6.6 mm

Width 6.1 mm

Brand onsemi / Fairchild

Continuous Collector Current 5.3 A

Gate-Emitter Leakage Current +/- 250 nA

Product Type IGBT Transistors

Standard Pack Qty 2500

Subcategory IGBTs

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Mfr. Part #: HGTD1N120BNS9A