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HGTG12N60C3D

IGBT 24A Through Hole 104W 42ns TO-247 600V

Product Category: IGBTs - Single
Mfr. Part #
HGTG12N60C3D
Manufacturer: onsemi
Package: TO-247-3
Lead Free Status /RoHS Status:
Data Sheet: HGTG12N60C3D Datasheet
Inventory: In Stock

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Mfr. Part #: HGTG12N60C3D

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category IGBTs - Single

Series -

Packaging Tube

Part-Aliases HGTG12N60C3D_NL

Unit-Weight 0.225401 oz

Mounting-Style Through Hole

Package-Case TO-247-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-247

Configuration Single

Power-Max 104W

Reverse-Recovery-Time-trr 42ns

Electric current collectors 24A

Voltage-Collector-Emitter-Breakdown-Max 600V

IGBT-Type -

Current-Collector-Pulsed-Icm 96A

Vce-on-Max-Vge-Ic 2.2V @ 15V, 15A

Switching-Energy 380Î¼J (on), 900Î¼J (off)

Total Gate Charge 48nC

Td-on-off-25Â°C -

Test-Condition -

Pd-Power-Dissipation 104 W

Maximum Operating Temperature + 150 C

Operating temperature range - 40 C

Collector-Emitter-Voltage-VCEO-Max 600 V

Collector-Emitter-Saturation-Voltage 1.65 V

Continuous-Collector-Current-at-25-C 24 A

Gate-Emitter-Leakage-Current +/- 100 nA

Maximum-Gate-Emitter-Voltage +/- 20 V

Continuous-Collector-Current-Ic-Max 24 A

Product Details

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25Â°C and 150Â°C. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061.

Features

â€¢ 24A, 600V at TC = 25Â°C
â€¢ Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150Â°C
â€¢ Short Circuit Rating
â€¢ Low Conduction Loss
â€¢ Hyperfast Anti-Parallel Diode

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Mfr. Part #: HGTG12N60C3D